Low‐Frequency Noise and Resistance as Reliability Indicators of Mechanically and Electrically Strained Thick‐Film Resistors

New contemporary applications of thick resistive films are inducing the need to investigate their behaviour under various stressing conditions. On the other hand, there is a growing interest in noise measurements as means of thick‐film resistor quality and reliability evaluation and evaluation of degradation under stress. For these reasons, this chapter presents effects of mechanical, electrical and simultaneous mechanical and electrical straining on performances of conventional thick‐film resistors that are analysed from micro‐ and macro‐structural, charge transport and low‐frequency noise aspects

Firing Variables and Strain Sensitivity of Bi2Ru2O7 Thick Resistive Films

In order to provide accurate and semi-real-time information about performances and conditions of various civil engineering structures thick-film resistors are often being used as strain sensors. For that purpose, Ba2Ru2O7 thick resistive films based on compositions with sheet resistivities of 1 kOhm/sq, 10 kOhm/sq and 100 kOhm/sq were evaluated. Resistors were fired at three different peak temperatures (825oC, 850oC and 875oC) and with three different dwelling times (5 min, 10 min and 15 min) in order to correlate influence of firing variables and thick resistive film strain sensitivity by tracking structure-related changes in resistance, gage factor and noise index values. For 10 kOhm/sq composition values of resistance change vs. temperature and temperature coefficient of resistance were measured and calculated

HAAR WAVELET OPERATIONAL MATRIX BASED NUMERICAL INVERSION OF LAPLACE TRANSFORM FOR IRRATIONAL AND TRANSCENDENTAL TRANSFER FUNCTIONS

Irrational and transcendental functions can often be seen in signal processing or physical phenomena analysis as consequences of fractional-order and distributed-order models that result in fractional or partial differential equations. In cases when finding solution in analytical form tends to be difficult or impossible, numerical calculations such as Haar wavelet operational matrix method can be used.  Haar wavelet establishes a direct procedure for transfer function inversion using the wavelet operational matrix for orthogonal function set integration. In this paper an inverse Laplace transform of irrational and transcendental transfer functions using Haar wavelet operational matrix is proposed. Results for a number inverse Laplace transforms are numerically solved and compared with the analytical solutions and solutions provided by commonly used Invlap and NILT algorithms. This approach is useful when the original cannot be represented by an analytical formula and validity of the obtained result needs to be crosschecked and error estimated

Optimizacija parametara sinterovanja debeloslojnih otpornika na bazi Bi2Ru2O7 slojne otpornosti 10 kΩ/sq

Razvoj novih i unapređenje postojećih elektronskih komponenti koje doprinose smanjenju po-trošnje električne energije pogoduju prelasku sa tradicionalnih na obnovljive izvore energije i doprinoseenergetskoj efikasnosti. Debeloslojni otpornici su pasivne komponente koje se sve više kor-iste u pametnim energetski štedljivim kućnim uređjima, LED osvetljenju, upravljanju klima uređajima, električnim trotinetima, sistemima za upravljanje baterijama itd. Zbog toga će u ovom radu biti reči o uticaju parametara sinterovanja na formiranje strukture najčešće korišćenih debe-loslojnih otpornika na bazi Bi2Ru2O7slojne otpornosti 10 kΩ/☐.Development of new and improvement of existing energy-saving electronic components are supporting transition from traditional to renewable energy sources and contributing to energy effi-ciency. Thick-film resistors are passive components that are often being used in energy-saving smart home appliances, LED lighting, air conditioning management, electric scooters, battery management systemsetc. For these reasons, this paper will deal with optimization of 10 kΩ/sq Bi2Ru2O7thick-film resistors sintering parameters.The 10th ICREPS was held on October 17 and 18, 2022, in Chamber of Commerce and Industry, of Serbia, Belgrade

RuO2/Bi2Ru2O7 thick-film strain sensor with low temperature sensitivity

Structural health monitoring that gathers information about performance and conditions of civil engineering structures requires implementation of sensor networks that include strain sensing devices. This paper introduces RuO2/Bi2Ru2O7 thick-film strain sensor with low-temperature sensitivity. Under strain, RuO2/Bi2Ru2O7 thick resistive film experiences reversible deformation that can be registered as a change in film resistivity. Based on that effect, a prototype of the strain sensor is being realized and evaluated. Evaluation included measurements of the resistance change under applied strain, determination of the gage factor and investigations of and thermal stability.ISPC «Modern information and electronic technologies» : May 23-27, Odes